An Electron Waveguide Model for FDSOI Transistors
We extend our previous semi-empirical model for quantum transport in a conventional nano-MOSFET to FDSOI transistors. In ultra-thin-body and -BOX (UTBB) FDSOI transistors, the electron channel can be treated as an electron waveguide. In the abrupt transition approximation, it is possible to derive a...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-04-01
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| Series: | Solids |
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| Online Access: | https://www.mdpi.com/2673-6497/3/2/14 |