β-Ga<sub>2</sub>O<sub>3</sub>-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

β-Ga<sub>2</sub>O<sub>3</sub>-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

During the past decade, Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, an...

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Bibliographic Details
Main Authors: Dinusha Herath Mudiyanselage, Bingcheng Da, Jayashree Adivarahan, Dawei Wang, Ziyi He, Kai Fu, Yuji Zhao, Houqiang Fu
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Electronics
Subjects:
Gallium Oxide
heterostructures
heterojunctions
power electronics
Online Access:https://www.mdpi.com/2079-9292/13/7/1234

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https://www.mdpi.com/2079-9292/13/7/1234

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