Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suf...

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Bibliographic Details
Main Authors: Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Micromachines
Subjects:
HEMTs
2DEG
GaN
challenges
opportunities
Online Access:https://www.mdpi.com/2072-666X/13/12/2133

Internet

https://www.mdpi.com/2072-666X/13/12/2133

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