Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied a certain share of the market with rapid mome...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-09-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/15/18/6670 |