Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio

Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio

Continuous downscaling of CMOS technology at the nanometer scale with conventional MOSFETs leads to short channel effects (SCE), increased subthreshold slope (SS), and leakage current, degrading the performance of ICs. We proposed a dual-source vertical tunnel field-effect transistor (TFET) with a s...

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Bibliographic Details
Main Authors: Minhaz Uddin Sohag, Md. Sherajul Islam, Kamal Hosen, Md. Al Imran Fahim, Md. Mosarof Hossain Sarkar, Jeongwon Park
Format: Article
Language:English
Published: Elsevier 2021-10-01
Series:Results in Physics
Subjects:
Vertical tunnel FET
Dual source
Ferroelectric material
Negative capacitance
Heterojunction
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379721008512

Internet

http://www.sciencedirect.com/science/article/pii/S2211379721008512

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