Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio
Continuous downscaling of CMOS technology at the nanometer scale with conventional MOSFETs leads to short channel effects (SCE), increased subthreshold slope (SS), and leakage current, degrading the performance of ICs. We proposed a dual-source vertical tunnel field-effect transistor (TFET) with a s...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-10-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721008512 |
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| author | Minhaz Uddin Sohag Md. Sherajul Islam Kamal Hosen Md. Al Imran Fahim Md. Mosarof Hossain Sarkar Jeongwon Park |
| author_facet | Minhaz Uddin Sohag Md. Sherajul Islam Kamal Hosen Md. Al Imran Fahim Md. Mosarof Hossain Sarkar Jeongwon Park |
| author_sort | Minhaz Uddin Sohag |
| collection | DOAJ |
| description | Continuous downscaling of CMOS technology at the nanometer scale with conventional MOSFETs leads to short channel effects (SCE), increased subthreshold slope (SS), and leakage current, degrading the performance of ICs. We proposed a dual-source vertical tunnel field-effect transistor (TFET) with a steeper subthreshold swing (SS) and superior electrostatic control thanks to quantum mechanical band-to-band tunneling. We show that the use of GaSb/InGaAsSb/InAs heterostructure boosts the band-to-band tunneling rate in TFETs, resulting in higher on-state current. Incorporating the negative capacitance effect using ferroelectric materials further enhances the performance of the proposed device greatly. The lowest SS of 21.94 mV/dec and an on–off current ratio of 4.3267 × 1011 were obtained for dual source GaSb/InGaAsSb/InAs heterostructure based vertical TFET. The lowest subthreshold swing was found as 17.37 mV/dec after integrating Hf1–xZrxO2 ferroelectric material into the gate stack. The negative capacitance effect also increases the on-state current tenfold, resulting in an incredible ION/IOFF ratio of 1012. The suggested device focuses on low power consumption applications by assuring a very low leakage current and a reduced subthreshold swing. |
| first_indexed | 2024-12-13T21:22:54Z |
| format | Article |
| id | doaj.art-7d384c13e17f48148dbcdbd27f19ff5f |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-13T21:22:54Z |
| publishDate | 2021-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-7d384c13e17f48148dbcdbd27f19ff5f2022-12-21T23:31:02ZengElsevierResults in Physics2211-37972021-10-0129104796Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratioMinhaz Uddin Sohag0Md. Sherajul Islam1Kamal Hosen2Md. Al Imran Fahim3Md. Mosarof Hossain Sarkar4Jeongwon Park5Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh; Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, USA; Corresponding author.Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshDepartment of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, BangladeshSchool of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada; Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, USAContinuous downscaling of CMOS technology at the nanometer scale with conventional MOSFETs leads to short channel effects (SCE), increased subthreshold slope (SS), and leakage current, degrading the performance of ICs. We proposed a dual-source vertical tunnel field-effect transistor (TFET) with a steeper subthreshold swing (SS) and superior electrostatic control thanks to quantum mechanical band-to-band tunneling. We show that the use of GaSb/InGaAsSb/InAs heterostructure boosts the band-to-band tunneling rate in TFETs, resulting in higher on-state current. Incorporating the negative capacitance effect using ferroelectric materials further enhances the performance of the proposed device greatly. The lowest SS of 21.94 mV/dec and an on–off current ratio of 4.3267 × 1011 were obtained for dual source GaSb/InGaAsSb/InAs heterostructure based vertical TFET. The lowest subthreshold swing was found as 17.37 mV/dec after integrating Hf1–xZrxO2 ferroelectric material into the gate stack. The negative capacitance effect also increases the on-state current tenfold, resulting in an incredible ION/IOFF ratio of 1012. The suggested device focuses on low power consumption applications by assuring a very low leakage current and a reduced subthreshold swing.http://www.sciencedirect.com/science/article/pii/S2211379721008512Vertical tunnel FETDual sourceFerroelectric materialNegative capacitanceHeterojunction |
| spellingShingle | Minhaz Uddin Sohag Md. Sherajul Islam Kamal Hosen Md. Al Imran Fahim Md. Mosarof Hossain Sarkar Jeongwon Park Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio Results in Physics Vertical tunnel FET Dual source Ferroelectric material Negative capacitance Heterojunction |
| title | Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio |
| title_full | Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio |
| title_fullStr | Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio |
| title_full_unstemmed | Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio |
| title_short | Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio |
| title_sort | dual source negative capacitance gasb ingaassb inas heterostructure based vertical tfet with steep subthreshold swing and high on off current ratio |
| topic | Vertical tunnel FET Dual source Ferroelectric material Negative capacitance Heterojunction |
| url | http://www.sciencedirect.com/science/article/pii/S2211379721008512 |
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