Measuring Non-Destructively the Total Indium Content and Its Lateral Distribution in Very Thin Single Layers or Quantum Dots Deposited onto Gallium Arsenide Substrates Using Energy-Dispersive X-ray Spectroscopy in a Scanning Electron Microscope

Measuring Non-Destructively the Total Indium Content and Its Lateral Distribution in Very Thin Single Layers or Quantum Dots Deposited onto Gallium Arsenide Substrates Using Energy-Dispersive X-ray Spectroscopy in a Scanning Electron Microscope

The epitaxial deposition of a precise number, or even fractions, of monolayers of indium (In)-rich semiconductors onto gallium arsenide (GaAs) substrates enables the creation of quantum dots based on InAs, InGaAs and indium phosphide (InP) for infrared light-emitting and laser diodes and the formati...

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Bibliographic Details
Main Author: Thomas Walther
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Nanomaterials
Subjects:
scanning electron microscopy (SEM)
energy-dispersive X-ray spectroscopy (EDXS)
InGaAs
Stranski–Krastanov
quantum dots
Online Access:https://www.mdpi.com/2079-4991/12/13/2220

Internet

https://www.mdpi.com/2079-4991/12/13/2220

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