Ultra-Thin Depleted Silicon On Insulator MOSFET: a simulation based on <em>COMSOL Multiphysics</em>&reg;

Ultra-Thin Depleted Silicon On Insulator MOSFET: a simulation based on <em>COMSOL Multiphysics</em>&reg;

<p>We use the MOS transistor model from COMSOL [1] as a template to develop our own UT-FD-SOI-MOSFET with an ultra-thin geometry (Channel thickness = 10nm). SOI-MOSFETs are used to reduce short channel effect problems in actual MOSFET structures and to enable further miniaturization. Our model...

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Bibliographic Details
Main Authors: José Bustamante, Lionel Trojman
Format: Article
Language:English
Published: Universidad San Francisco de Quito USFQ 2012-06-01
Series:ACI Avances en Ciencias e Ingenierías
Subjects:
SOI-MOSFET
Modelado Computacional
COMSOL Multiphysics
Voltaje de Umbral
Online Access:http://revistas.usfq.edu.ec/index.php/avances/article/view/88

Internet

http://revistas.usfq.edu.ec/index.php/avances/article/view/88

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