Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increas...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-10-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/11/1297 |