Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increas...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-10-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/11/1297 |
| _version_ | 1827676021707505664 |
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| author | Woo-Jin Jung Jun-Young Park |
| author_facet | Woo-Jin Jung Jun-Young Park |
| author_sort | Woo-Jin Jung |
| collection | DOAJ |
| description | In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increased under limited height of NAND string. In this context, finding a novel approach based on dielectric engineering seems timely and applicable. This paper covers the voltage interference characteristics in 3D NAND with respect to dielectrics, then proposes an alternative cell structure to suppress such interference. |
| first_indexed | 2024-03-10T05:15:54Z |
| format | Article |
| id | doaj.art-7d81118ead744c04afee6966bb63ae60 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T05:15:54Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-7d81118ead744c04afee6966bb63ae602023-11-23T00:25:24ZengMDPI AGMicromachines2072-666X2021-10-011211129710.3390/mi12111297Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash MemoryWoo-Jin Jung0Jun-Young Park1School of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Chungbuk, Cheongju 28644, KoreaSchool of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Chungbuk, Cheongju 28644, KoreaIn contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increased under limited height of NAND string. In this context, finding a novel approach based on dielectric engineering seems timely and applicable. This paper covers the voltage interference characteristics in 3D NAND with respect to dielectrics, then proposes an alternative cell structure to suppress such interference.https://www.mdpi.com/2072-666X/12/11/1297dielectricsflash memoryinterferencecell-programmingvacuum dielectricV-NAND |
| spellingShingle | Woo-Jin Jung Jun-Young Park Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory Micromachines dielectrics flash memory interference cell-programming vacuum dielectric V-NAND |
| title | Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory |
| title_full | Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory |
| title_fullStr | Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory |
| title_full_unstemmed | Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory |
| title_short | Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory |
| title_sort | dielectric engineering to suppress cell to cell programming voltage interference in 3d nand flash memory |
| topic | dielectrics flash memory interference cell-programming vacuum dielectric V-NAND |
| url | https://www.mdpi.com/2072-666X/12/11/1297 |
| work_keys_str_mv | AT woojinjung dielectricengineeringtosuppresscelltocellprogrammingvoltageinterferencein3dnandflashmemory AT junyoungpark dielectricengineeringtosuppresscelltocellprogrammingvoltageinterferencein3dnandflashmemory |