Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studi...

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Bibliographic Details
Main Authors: Mikhail O. Petrushkov, Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, Anton K. Gutakovskii, Victor V. Atuchin, Valery V. Preobrazhenskii
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Nanomaterials
Subjects:
low-temperature GaAs
molecular-beam epitaxy
III-V/Si integration
self-assembled quantum dots
dislocation filter
Online Access:https://www.mdpi.com/2079-4991/12/24/4449

Internet

https://www.mdpi.com/2079-4991/12/24/4449

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