Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

Geahča maid

• Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
  Dahkki: Lau, Sien Hui
  Almmustuhtton: (2020)
• On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
  Dahkki: Kyaw, Zabu, et al.
  Almmustuhtton: (2014)
• Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices
  Dahkki: Tadao Hashimoto, et al.
  Almmustuhtton: (2022-08-01)
• Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
  Dahkki: Sun, Xiaowei, et al.
  Almmustuhtton: (2013)
• Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
  Dahkki: Zhang, Zi-Hui, et al.
  Almmustuhtton: (2013)