Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors

Effects of Charge Trapping at the MoS<sub>2</sub>–SiO<sub>2</sub> Interface on the Stability of Subthreshold Swing of MoS<sub>2</sub> Field Effect Transistors

The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS<sub>2</sub> field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different...

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Bibliographic Details
Main Authors: Xinnan Huang, Yao Yao, Songang Peng, Dayong Zhang, Jingyuan Shi, Zhi Jin
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Materials
Subjects:
transition metal dichalcogenides (TMDCs)
MoS<sub>2</sub> FET
hysteresis
subthreshold swing
interface states
Online Access:https://www.mdpi.com/1996-1944/13/13/2896

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https://www.mdpi.com/1996-1944/13/13/2896

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