The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation
In this work, a GaN-based multiple quantum well (MQW) sample has a much higher IQE although it has a stronger non-radiative recombination. Through experimental verification, the higher IQE is attributed to the suppressed carrier leakage mechanism, which is normally neglected under optical excitation...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-01-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/2/171 |