Numerical Analysis of Gate-All-Around HfO<sub>2</sub>/TiO<sub>2</sub>/HfO<sub>2</sub> High-K Dielectric Based WSe<sub>2</sub> NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio

Numerical Analysis of Gate-All-Around HfO<sub>2</sub>/TiO<sub>2</sub>/HfO<sub>2</sub> High-K Dielectric Based WSe<sub>2</sub> NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio

Gate-all-around (GAA) field effect transistors (FETs) have appeared as one of the potential candidates for the electrostatic integrity required to reduce MOSFETs to minimum channel lengths. Meanwhile, the negative capacitance effect of ferroelectrics is known as a remarkable quality enhancer for MOS...

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Bibliographic Details
Main Authors: Kamal Hosen, Md. Sherajul Islam, Catherine Stampfl, Jeongwon Park
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Field effect transistor
ferroelectric materials
gate-all-around
2D materials
negative capacitance
Online Access:https://ieeexplore.ieee.org/document/9514875/

Internet

https://ieeexplore.ieee.org/document/9514875/

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