Analysis of Threshold Voltage Shift for Full V<sub>GS</sub>/V<sub>DS</sub>/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Analysis of Threshold Voltage Shift for Full V<sub>GS</sub>/V<sub>DS</sub>/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical e...

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Bibliographic Details
Main Authors: Je-Hyuk Kim, Jun Tae Jang, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Yoon Kim, Dae Hwan Kim
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
indium-gallium-zinc-oxide thin-film transistors (-IGZO TFT)
oxygen content
instability
electron trapping
hole trapping
donor-like state creation
Online Access:https://www.mdpi.com/2072-666X/12/3/327

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https://www.mdpi.com/2072-666X/12/3/327

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