Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction. The proposed structure reduces thetunneling barrier width to have a higher on-sate currentusing Ge/GaAs heterojunction at the sourc...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Islamic Azad University, Marvdasht Branch
2022-01-01
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| Series: | Journal of Optoelectronical Nanostructures |
| Subjects: | |
| Online Access: | https://jopn.marvdasht.iau.ir/article_5086_1946d1428566826fc512e64d850ad7f8.pdf |