Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

This paper presents a GaN-based High Electron Mobility Transistor (HEMT) with a connected dual-channel structure (CDC-HEMT). Specifically, the Al0.05Ga0.95N layer beneath the first channel enables the second channel to be in a non-conducting state while simultaneously increasing the number of electr...

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Bibliographic Details
Main Authors: Longfei Yang, Huiqing Sun, Ruipeng Lv, Zhen Liu, Yuanhao Zhang, Penglin Wang, Yuan Li, Yong Huang, Zhiyou Guo
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Connect-dual-channel
double heterojunction
GaN normally-off HEMT
trap offset
P-GaN gate
Online Access:https://ieeexplore.ieee.org/document/10328855/

Internet

https://ieeexplore.ieee.org/document/10328855/

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