Gain characteristics of InGaN quantum wells with AlGaInN barriers
A reduction of the threshold current density of InGaN quantum well (QW) lasers is found from the usage of AlGaInN barriers. Large bandgap and strain-managing AlGaInN barriers surrounding the InGaN quantum wells’ (QWs) active regions are investigated via the 6-band self-consistent k·p formalism for t...
| Hauptverfasser: | , , , , |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
AIP Publishing LLC
2019-04-01
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| Schriftenreihe: | AIP Advances |
| Online Zugang: | http://dx.doi.org/10.1063/1.5086979 |