Study on electrochemical mechanical polishing process of silicon carbide crystal

Study on electrochemical mechanical polishing process of silicon carbide crystal

To solve the problem of low polishing efficiency of silicon carbide crystal, electrochemical mechanical polishing (ECMP) of silicon carbide was carried out to study the effect of NaOH, NaNO3 and H3PO4 electrolytes on electrochemical oxidation of silicon carbide. NaNO3 of 0.6 mol/L was selected as th...

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Bibliographic Details
Main Authors: Lei WANG, Runze WU, Lin NIU, Zhibo AN, Zhuji JIN
Format: Article
Language:zho
Published: Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. 2022-08-01
Series:Jin'gangshi yu moliao moju gongcheng
Subjects:
silicon carbide
electrochemical mechanical polishing (ecmp)
electrochemical oxidation
mixed abrasive grain
material removal rate
Online Access:http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0029

Internet

http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0029

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