Study on electrochemical mechanical polishing process of silicon carbide crystal
To solve the problem of low polishing efficiency of silicon carbide crystal, electrochemical mechanical polishing (ECMP) of silicon carbide was carried out to study the effect of NaOH, NaNO3 and H3PO4 electrolytes on electrochemical oxidation of silicon carbide. NaNO3 of 0.6 mol/L was selected as th...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd.
2022-08-01
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| Series: | Jin'gangshi yu moliao moju gongcheng |
| Subjects: | |
| Online Access: | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2022.0029 |