Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode

Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode

In this work, the ferroelectric characteristic of a 5 nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electr...

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Bibliographic Details
Main Authors: Cheng-Hung Wu, Kuan-Chi Wang, Yu-Yun Wang, Chenming Hu, Chun-Jung Su, Tian-Li Wu
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Nanomaterials
Subjects:
ferroelectric
HfZrO<sub>2</sub>
strained TiN
compressive
sub-5 nm
Online Access:https://www.mdpi.com/2079-4991/12/3/468

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https://www.mdpi.com/2079-4991/12/3/468

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