Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching
Abstract Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum r...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2017-06-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-017-2197-3 |