Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching

Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching

Abstract Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum r...

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Bibliographic Details
Main Authors: Sabar D. Hutagalung, Mohammed M. Fadhali, Raed A. Areshi, Fui D. Tan
Format: Article
Language:English
Published: SpringerOpen 2017-06-01
Series:Nanoscale Research Letters
Subjects:
Silicon nanowires
Electroless etching
Microstructures
Reflectance
Band gap energy
Resistivity
Online Access:http://link.springer.com/article/10.1186/s11671-017-2197-3

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http://link.springer.com/article/10.1186/s11671-017-2197-3

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