Impacts of capacitive current on electrolyte-gated graphene field-effect transistor arrays

We investigate the effect of gate-source current ( I _GS ) on variations in the Dirac point voltage ( V _DP ) in electrolyte-gated graphene field-effect transistor (EG-GFET) arrays through a time-resolved analysis of I _GS and an equivalent circuit model. Source/drain electrodes exposed to the elect...

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Autors principals: Shota Ushiba, Tomomi Nakano, Yuka Tokuda, Shinsuke Tani, Masahiko Kimura, Kazuhiko Matsumoto
Format: Article
Idioma:English
Publicat: IOP Publishing 2025-01-01
Col·lecció:Applied Physics Express
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Accés en línia:https://doi.org/10.35848/1882-0786/adb125