Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solutions of the mode space non-equilibrium Green’s functi...

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Bibliographic Details
Main Authors: Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Nanomaterials
Subjects:
Graphene nanoribbon (GNR)
tunnel field-effect transistors (TFETs)
junctionless (JL)
quantum simulation
band-to-band tunneling (BTBT)
work function (WF)
Online Access:https://www.mdpi.com/2079-4991/14/2/220

Internet

https://www.mdpi.com/2079-4991/14/2/220

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