Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for high efficiency DUV-LEDs.

Bibliographic Details
Main Author: Hieu. P. T. Nguyen
Format: Article
Language:English
Published: Nature Publishing Group 2022-05-01
Series:Light: Science & Applications
Online Access:https://doi.org/10.1038/s41377-022-00861-1