Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for high efficiency DUV-LEDs.
Main Author: | Hieu. P. T. Nguyen |
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Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2022-05-01
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Series: | Light: Science & Applications |
Online Access: | https://doi.org/10.1038/s41377-022-00861-1 |
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