Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode

Atomic layer deposited (ALD) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and relia...

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Bibliographic Details
Main Authors: Chandreswar Mahata, Myounggon Kang, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Nanomaterials
Subjects:
HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> tri-layer RRAM
transparent electrode
multilevel conductance
synaptic properties
Online Access:https://www.mdpi.com/2079-4991/10/10/2069

Internet

https://www.mdpi.com/2079-4991/10/10/2069

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