Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode
Atomic layer deposited (ALD) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and relia...
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MDPI AG
2020-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/10/2069 |
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| author | Chandreswar Mahata Myounggon Kang Sungjun Kim |
| author_facet | Chandreswar Mahata Myounggon Kang Sungjun Kim |
| author_sort | Chandreswar Mahata |
| collection | DOAJ |
| description | Atomic layer deposited (ALD) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> interface where tri-valent Al incorporates with HfO<sub>2</sub> and produces HfAlO. The uniformity in bipolar resistive switching with I<sub>on</sub>/I<sub>off</sub> ratio (>10) and excellent endurance up to >10<sup>3</sup> cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing. |
| first_indexed | 2024-03-10T15:29:39Z |
| format | Article |
| id | doaj.art-7f0401612fb9411f9a942096fb0a5e03 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T15:29:39Z |
| publishDate | 2020-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-7f0401612fb9411f9a942096fb0a5e032023-11-20T17:45:36ZengMDPI AGNanomaterials2079-49912020-10-011010206910.3390/nano10102069Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO ElectrodeChandreswar Mahata0Myounggon Kang1Sungjun Kim2School of Electronics Engineering, Chungbuk National University, Cheongju 28644, KoreaDepartment of Electronics Engineering, Korea National University of Transportation, Chungju-si 27469, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaAtomic layer deposited (ALD) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> interface where tri-valent Al incorporates with HfO<sub>2</sub> and produces HfAlO. The uniformity in bipolar resistive switching with I<sub>on</sub>/I<sub>off</sub> ratio (>10) and excellent endurance up to >10<sup>3</sup> cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.https://www.mdpi.com/2079-4991/10/10/2069HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> tri-layer RRAMtransparent electrodemultilevel conductancesynaptic properties |
| spellingShingle | Chandreswar Mahata Myounggon Kang Sungjun Kim Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode Nanomaterials HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> tri-layer RRAM transparent electrode multilevel conductance synaptic properties |
| title | Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode |
| title_full | Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode |
| title_fullStr | Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode |
| title_full_unstemmed | Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode |
| title_short | Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO Electrode |
| title_sort | multi level analog resistive switching characteristics in tri layer hfo sub 2 sub al sub 2 sub o sub 3 sub hfo sub 2 sub based memristor on ito electrode |
| topic | HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> tri-layer RRAM transparent electrode multilevel conductance synaptic properties |
| url | https://www.mdpi.com/2079-4991/10/10/2069 |
| work_keys_str_mv | AT chandreswarmahata multilevelanalogresistiveswitchingcharacteristicsintrilayerhfosub2subalsub2subosub3subhfosub2subbasedmemristoronitoelectrode AT myounggonkang multilevelanalogresistiveswitchingcharacteristicsintrilayerhfosub2subalsub2subosub3subhfosub2subbasedmemristoronitoelectrode AT sungjunkim multilevelanalogresistiveswitchingcharacteristicsintrilayerhfosub2subalsub2subosub3subhfosub2subbasedmemristoronitoelectrode |