Enhancement of UV emission and optical bandgap of ZnO nanowires via doping and post-growth annealing
Zinc oxide (ZnO) nanowires (NWs) are gaining importance in optoelectronics because of their excellent electrical and optical properties. However, defects in the NW structure leads to suppression of the near-band-edge (NBE) ultraviolet (UV) emission, limiting their full potential for applications in...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab77f0 |