Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap.

Bibliographic Details
Main Authors: Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Harald Schneider, Manfred Helm, Emmanouil Dimakis
Format: Article
Language:English
Published: Nature Portfolio 2019-06-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-10654-7

Internet

https://doi.org/10.1038/s41467-019-10654-7

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