Investigation on the Degradation Mechanism of Si/SiC Cascode Device Under Repetitive Short-Circuit Tests
The Si/SiC Cascode device has been widely accepted in various applications, however, its reliability issue still remains a major concern and needs to be extensively investigated. In this paper, the degradation of a 750 V Si/SiC Cascode device under repetitive short-circuit (SC)...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Open Journal of Power Electronics |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10449481/ |