Investigation on the Degradation Mechanism of Si/SiC Cascode Device Under Repetitive Short-Circuit Tests
The Si/SiC Cascode device has been widely accepted in various applications, however, its reliability issue still remains a major concern and needs to be extensively investigated. In this paper, the degradation of a 750 V Si/SiC Cascode device under repetitive short-circuit (SC)...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10449481/ |