Enhanced Carrier Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

Enhanced Carrier Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

The external quantum efficiency (EQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) is still far from satisfactory due to the main issues of electron leakage and insufficient hole injection. The positive sheet charges generated by polarization at the interface between the last qua...

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Bibliographic Details
Main Authors: Mengran Liu, Chao Liu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Photonics Journal
Subjects:
Carrier injection
DUV LED
polarization-induced sheet charges
Online Access:https://ieeexplore.ieee.org/document/9749954/

Internet

https://ieeexplore.ieee.org/document/9749954/

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