About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors
In this paper we introduce an approach to manufacture a heterobipolar transistors. Framework this approach we consider doping by diffusion or by ion implantation of required parts of a heterostructure with special configuration and optimization of annealing of dopant and/or radiation defects. In thi...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MULTIPHYSICS
2016-10-01
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| Series: | International Journal of Multiphysics |
| Online Access: | http://journal.multiphysics.org/index.php/IJM/article/view/283 |