Characterizing the structure of topological insulator thin films
We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption....
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-08-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4926455 |