Characterizing the structure of topological insulator thin films
We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption....
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4926455 |
| _version_ | 1828424922361233408 |
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| author | Anthony Richardella Abhinav Kandala Joon Sue Lee Nitin Samarth |
| author_facet | Anthony Richardella Abhinav Kandala Joon Sue Lee Nitin Samarth |
| author_sort | Anthony Richardella |
| collection | DOAJ |
| description | We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb)2Te3 and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO3 and the use of capping layers to protect topological insulator films from oxidation and exposure. |
| first_indexed | 2024-12-10T16:23:52Z |
| format | Article |
| id | doaj.art-7fdc5d47aa90480aad3c8c51ce763189 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-10T16:23:52Z |
| publishDate | 2015-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-7fdc5d47aa90480aad3c8c51ce7631892022-12-22T01:41:43ZengAIP Publishing LLCAPL Materials2166-532X2015-08-0138083303083303-710.1063/1.4926455004593APMCharacterizing the structure of topological insulator thin filmsAnthony Richardella0Abhinav Kandala1Joon Sue Lee2Nitin Samarth3Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USADepartment of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USADepartment of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USADepartment of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USAWe describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb)2Te3 and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO3 and the use of capping layers to protect topological insulator films from oxidation and exposure.http://dx.doi.org/10.1063/1.4926455 |
| spellingShingle | Anthony Richardella Abhinav Kandala Joon Sue Lee Nitin Samarth Characterizing the structure of topological insulator thin films APL Materials |
| title | Characterizing the structure of topological insulator thin films |
| title_full | Characterizing the structure of topological insulator thin films |
| title_fullStr | Characterizing the structure of topological insulator thin films |
| title_full_unstemmed | Characterizing the structure of topological insulator thin films |
| title_short | Characterizing the structure of topological insulator thin films |
| title_sort | characterizing the structure of topological insulator thin films |
| url | http://dx.doi.org/10.1063/1.4926455 |
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