Layer-dependent Schottky contact at van der Waals interfaces: V-doped WSe2 on graphene
Abstract Contacting two-dimensional (2D) semiconductors with van der Waals semimetals significantly reduces the contact resistance and Fermi level pinning due to defect-free interfaces. However, depending on the band alignment, a Schottky barrier remains. Here we study the evolution of the valence a...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-09-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-022-00342-4 |