Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application

SiC power devices are used for medium-voltage (MV) motor drive and traction applications due to their higher temperature operation, switching frequencies, and higher efficiencies than Si-based devices. This article investigates three 3.3 kV reverse blocking or current switch configurations for their...

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Detalles Bibliográficos
Main Authors: Sneha Narasimhan, Ajit Kanale, Subhashish Bhattacharya, Jayant B. Baliga
Formato: Artigo
Idioma:English
Publicado: IEEE 2023-01-01
Series:IEEE Access
Subjects:
3.3 kV SiC diode
3.3 kV SiC MOSFET
common-source (CS)
common-drain (CD)
current source inverter (CSI)
current switch
Acceso en liña:https://ieeexplore.ieee.org/document/10210408/

Internet

https://ieeexplore.ieee.org/document/10210408/

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