Effect of Deposition Conditions on Oxide Parameters of Silicon
In this study, the effect of deposition conditions and the temperature thermal treatment on the oxide parameters of two structures of silicon layers were investigated. The study present the evolution of boron profiles following a dry thermal oxidation in poly-Si/SiO2/c-Si films deposited at 520°C an...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2021-01-01
|
| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2021/05/e3sconf_iccsre2021_01046.pdf |