Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

The p‐type nanowire field‐effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in‐depth technology computer‐aided design (TCAD) with quantum models for sub‐10‐nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell...

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Bibliographic Details
Main Authors: Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won‐Jun Lee, Jongwan Jung, Seongjae Cho
Format: Article
Language:English
Published: Electronics and Telecommunications Research Institute (ETRI) 2019-10-01
Series:ETRI Journal
Subjects:
cmos technology
high hole mobility
low‐power high‐speed operation
nanowire fet
sige shell channel
sub‐10‐nm logic technology
valence‐band offset
Online Access:https://doi.org/10.4218/etrij.2018-0281

Internet

https://doi.org/10.4218/etrij.2018-0281

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