Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays
III-nitride semiconductors (AlGaN, GaN and InGaN) have received considerable attention in various fields ranging from high-frequency and high-temperature electronics [1] to LED lighting technologies [2]. [...]
| Autori principali: | , , , |
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| Natura: | Articolo |
| Lingua: | English |
| Pubblicazione: |
MDPI AG
2019-06-01
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| Serie: | Proceedings |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2504-3900/14/1/43 |