Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays
III-nitride semiconductors (AlGaN, GaN and InGaN) have received considerable attention in various fields ranging from high-frequency and high-temperature electronics [1] to LED lighting technologies [2]. [...]
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-06-01
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| Series: | Proceedings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2504-3900/14/1/43 |