Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays

Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays

III-nitride semiconductors (AlGaN, GaN and InGaN) have received considerable attention in various fields ranging from high-frequency and high-temperature electronics [1] to LED lighting technologies [2]. [...]

Bibliographic Details
Main Authors:	Konrad Maier, Andreas Helwig, Gerhard Müller, Martin Eickhoff
Format:	Article
Language:	English
Published:	MDPI AG 2019-06-01
Series:	Proceedings
Subjects:	n/a
Online Access:	https://www.mdpi.com/2504-3900/14/1/43

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