Capacitance spectroscopy of InAs quantum dots inserted in an AlGaAs/GaAs HEMT for photodetector applications
We have investigated the electrical characteristics of an AlGaAs/GaAs high electron mobility transistor, in which a layer of InAs self-assembled Quantum Dots (QDs) was inserted below the 2DEG channel. A Negative Differential Capacitance (NDC) appeared in the capacitance–voltage characteristics at a...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0167563 |