Optical Control of Millmeter-wave Lateral Double-Drift Region Silicon IMPATT Device

Optical Control of Millmeter-wave Lateral Double-Drift Region Silicon IMPATT Device

The effect of optical illumination on lateral Double-Drift Region (DDR) structure of Silicon Impact Avalanche Transit Time (IMPATT) device is investigated in this paper. The device is designed to operate at mm-wave W-band frequency. The optical modulation of DC and RF properties of lateral DDR IMPAT...

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Bibliographic Details
Main Authors: A. Acharyya, S. Banerjee, J. P. Banerjee
Format: Article
Language:English
Published: Spolecnost pro radioelektronicke inzenyrstvi 2012-12-01
Series:Radioengineering
Subjects:
Lateral IMPATT structure
optical control
millimeter-wave
DDR device
Online Access:http://www.radioeng.cz/fulltexts/2012/12_04_1208_1217.pdf

Internet

http://www.radioeng.cz/fulltexts/2012/12_04_1208_1217.pdf

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