Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and s...

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Bibliographic Details
Main Authors: Yong Du, Zhenzhen Kong, Muhammet S. Toprak, Guilei Wang, Yuanhao Miao, Buqing Xu, Jiahan Yu, Ben Li, Hongxiao Lin, Jianghao Han, Yan Dong, Wenwu Wang, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Nanomaterials
Subjects:
Ge
optimization
parameter
threading dislocation
strain
RPCVD
Online Access:https://www.mdpi.com/2079-4991/11/4/928

Internet

https://www.mdpi.com/2079-4991/11/4/928

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