Magnetic Ni‐Nanoinclusions in VO2 Thin Films for Broad Tuning of Phase Transition Properties

Abstract Mott insulator VO2 exhibits an ultrafast and reversible semiconductor‐to‐metal transition (SMT) near 340 K (67 °C). In order to fulfill the multifunctional device applications, effective transition temperature (Tc) tuning as well as integrated functionality in VO2 is desired. In this study,...

Full description

Bibliographic Details
Main Authors: Zihao He, Jie Jian, Lizabeth Quigley, Nirali A. Bhatt, James P. Barnard, Claire A. Mihalko, Haohan Wang, Xin Li Phuah, Juanjuan Lu, Xiaoshan Xu, Haiyan Wang
Format: Article
Language:English
Published: Wiley-VCH 2023-12-01
Series:Advanced Physics Research
Subjects:
Online Access:https://doi.org/10.1002/apxr.202300031