Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms

Drift Suppression of Solution-Gated Graphene Field-Effect Transistors by Cation Doping for Sensing Platforms

Solution-gated graphene field-effect transistors (SG-GFETs) provide an ideal platform for sensing biomolecules owing to their high electron/hole mobilities and 2D nature. However, the transfer curve often drifts in an electrolyte solution during measurements, making it difficult to accurately estima...

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Bibliographic Details
Main Authors: Naruto Miyakawa, Ayumi Shinagawa, Yasuko Kajiwara, Shota Ushiba, Takao Ono, Yasushi Kanai, Shinsuke Tani, Masahiko Kimura, Kazuhiko Matsumoto
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Sensors
Subjects:
graphene field effect transistors
drift suppression
sensor drift
biosensors
Online Access:https://www.mdpi.com/1424-8220/21/22/7455

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https://www.mdpi.com/1424-8220/21/22/7455

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