Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect density (TDD) was successfully decreased from 2.9 × 10&...

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Bibliographic Details
Main Authors: Buqing Xu, Yong Du, Guilei Wang, Wenjuan Xiong, Zhenzhen Kong, Xuewei Zhao, Yuanhao Miao, Yijie Wang, Hongxiao Lin, Jiale Su, Ben Li, Yuanyuan Wu, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Materials
Subjects:
CMOS
Ge epitaxy
selective epitaxial growth
compressive strain
Online Access:https://www.mdpi.com/1996-1944/15/10/3594

Internet

https://www.mdpi.com/1996-1944/15/10/3594

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