Controlling Resistance Switching Performances of Hf0.5Zr0.5O2 Films by Substrate Stress and Potential in Neuromorphic Computing

Controlling Resistance Switching Performances of Hf0.5Zr0.5O2 Films by Substrate Stress and Potential in Neuromorphic Computing

Ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have attracted wide attention in terms of potential applications of nonvolatile ferroelectric memories. However, the effect of strain on the resistance switching characteristics of the ferroelectric HZO thin‐film memristors has not been fully studied so fa...

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Bibliographic Details
Main Authors: Zuoao Xiao, Herng Yau Yoong, Jing Cao, Zhen Zhao, Jingsheng Chen, Xiaobing Yan
Format: Article
Language:English
Published: Wiley 2022-08-01
Series:Advanced Intelligent Systems
Subjects:
Hf0.5Zr0.5O2
oxygen vacancies
resistance switching
substrate stress
synaptic bionics
Online Access:https://doi.org/10.1002/aisy.202100244

Internet

https://doi.org/10.1002/aisy.202100244

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